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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3980 description collector-base breakdown voltage- : v (br)cbo = 900v(min.) wide area of safe operation high speed switching applications designed for high speed sw itching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ces collector-emitter voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i cm collector current-peak 6 a i b b base current-continuous 2 a collector power dissipation @t a =25 3 p c collector power dissipation @t c =25 70 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3980 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v i cbo collector cutoff current v cb = 900v; i e = 0 50 a i ebo emitter cutoff current v eb = 7v; i c = 0 50 a h fe-1 dc current gain i c = 0.1a; v ce = 5v 8 h fe-2 dc current gain i c = 2a; v ce = 5v 6 f t current-gain?bandwidth product i c = 0.2a; v ce = 5v; f= 1mhz 15 mhz switching times t on turn-on time 0.7 s t s storage time 2.5 s t f fall time i c = 2a; i b1 = 0.4a; i b2 = -0.8a; v cc = 250v 0.3 s isc website www.iscsemi.cn |
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